Hynix Semiconductor H8BCS0UN0MCR-4EM (Custom01) BGA(137) Device
Adapters for Automated Programmers
| 8th Gen | 9th Gen | Flashstream |
| FVE4ASM137BGH, FVE4ASM137BGH | FVE4ASM137BGH | FVE4ASM137BGH, FVE4ASM137BGH |
Adapters for Manual Programmers
| 8th Gen | 9th Gen | Flashstream |
| FVE4ASM137BGH, FVE4ASM137BGH | FVE4ASM137BGH | FVE4ASM137BGH, FVE4ASM137BGH |
Adapters for Engineering Programmers
Last Updated: 05/18/2023
If the device is not yet supported by your BPM programmer (Generation), request Device Support
Note
IMPORTANT: This is a Custom algorithm. Factory Bad Blocks are indicated at word 1024 of the first and second page of a block. Bytes 512 1040 1568 2096 of page 0 page 1 page 61 and page 63 in a bad block are checked to be 00h. This is a NAND Flash Memory device with a minimum of 4016 blocks. Each block contains 64 pages which are divided into a 1K word main page and a 32-word control area. This algorithm is mapped with each page considered a contiguous (1K+32) word page. Bad Blocks are indicated at word 1024 of the first and second page of a block. Bit Error Rate Tolerance is set to ‘1’ by default. It can be modified under Device > NAND Options.
BPM does not sell programmable devices, nor do we program devices directly. BPM makes programmers and accessories to make programming in-house fast, easy, and profitable.
Additional information
| Manufacturer | Hynix Semiconductor |
|---|---|
| Packages | BGA(137) |
| Part Number | H8BCS0UN0MCR-4EM |
| Vcc(program) | 1.8 |
| Package |