Hynix Semiconductor HYC0UEF0AF3P-3S60E BGA(137) Device
Adapters for Automated Programmers
| 8th Gen | 9th Gen | Flashstream |
| FVE4ASMH137BGA, FVE4ASMH137BGA | FVE4ASMH137BGA | FVE4ASMH137BGA, FVE4ASMH137BGA |
Adapters for Manual Programmers
| 8th Gen | 9th Gen | Flashstream |
| FVE4ASMH137BGA, FVE4ASMH137BGA | FVE4ASMH137BGA | FVE4ASMH137BGA, FVE4ASMH137BGA |
Adapters for Engineering Programmers
Last Updated: 05/18/2023
If the device is not yet supported by your BPM programmer (Generation), request Device Support
Note
IMPORTANT: This is a Multi-Chip Package MEMORY with 512M Bit Nand Flash and 256M Bit Mobile SDRAM. NAND Flash Memory with a minimum of 4016 blocks. Each block contains 32 pages which are divided into a 512 byte main page and a 16 byte spare area. This algorithm is mapped with each page considered an contiguous 528 byte page. Bad Blocks are indicated at byte 517 of the first page or second page of a block. These bytes are forced to be FFh to indicate valid blocks. A device will be rejected if there are too many Bad Blocks found on its Flash array.
BPM does not sell programmable devices, nor do we program devices directly. BPM makes programmers and accessories to make programming in-house fast, easy, and profitable.
Additional information
| 8-bit Bytes | 69206016 |
|---|---|
| Manufacturer | Hynix Semiconductor |
| Packages | BGA(137) |
| Part Number | HYC0UEF0AF3P-3S60E |
| Vcc(program) | 3.3 |
| Package |