Micron MT29F1G08ABADAWP-E:D (Custom 02) TSOP(48) Device

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Last Updated: 05/18/2023

IMPORTANT: This is a custom algorithm. The algorithm checks all 8 first byte of spare area of first page of block. If 75% of bit of first byte are 0 or 50% of bit of all 8 bytes are 0 then the block is considered bad. When a new block is discovered bad the algorithm shall attempt to write at least these 8 bytes to 0 then check than first byte is actually 0 and there is no less than 75% of bit to 0 in the 8 bytes. Otherwise the device will fail. To do device Read Compare or standalone Verify use device selection Micron MT29F1G08ABADAWP-E:D (Custom 03) This is a NAND Flash Memory device with a minimum of 1004 blocks. Each block contains 64 pages which are divided into a 2K Byte main page and a 64 byte control area. This algorithm is mapped with each page considered a contiguous (2K+64) byte page. Bad Blocks are indicated at byte 2048 of the first page of a block. This device uses an internal ECC that is enabled by default. Bit Error Rate Tolerance is set to ‘1’ by default. It can be modified under Device > NAND Options. ‘