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Micron MT29F4G08ABAEAH4:E (custom 01) BGA(63) Device

Adapters for Automated Programmers

9th Gen
FVE4ASMC63BGPE

Adapters for Manual Programmers

9th Gen
FVE4ASMC63BGPE

Adapters for Engineering Programmers


Last Updated: 05/18/2023

If the device is not yet supported by your BPM programmer (Generation), request Device Support

Note


IMPORTANT:

Device Type: RAW NAND Flash Memory
Device Size: 4 Gbit


Memory Organization:

Memory Type

Attributes(*)

Included in default Range (Y/N) DUT Physical Byte Address(hex)(if this area is selected/Activated) BPWin Buffer Byte Address(hex)
NAND Flash R/W/E Yes 0000_0000 – 21BF_FFFF 0000_0000 – 21BF_FFFF

* R:Read only W:One time programmable (OTP) R/W:readable and one time programmable (OTP) R/W/E:readable and rewritable if not locked. Any configurations listed under Device-Specific’ in the menu item Device-> Settings will be written to the DUT during ‘Program’ operation regardless of memory range selection. Special Device Considerations:

This is a NAND Flash Memory device with a minimum of 2008 blocks.
Each block contains 64 pages which are divided into a 4K Byte main page and a 224 byte control area.
This algorithm is mapped with each page considered a contiguous (4K+224) byte page.
Bad Blocks are indicated at byte 4096 of the first page of a block.
Bit Error Rate Tolerance is set to ‘1’ by default. It can be modified under Device > NAND Options.
This custom algorithm is to be used in conjunction with Bad Block Management Scheme ‘Custom 38 (BCHBCMv72 BCH (HW))’.
The maximum allowable bad blocks is 15 per partition and 40 total.
Please use Device->Image_Format to create a Data Pattern formatted with BCH8 (HW) – Galois field orders – 14 for this device.

BPM does not sell programmable devices, nor do we program devices directly. BPM makes programmers and accessories to make programming in-house fast, easy, and profitable.

Additional information

8-bit Bytes

566231040

Manufacturer

Micron

Packages

BGA(63)

Part Number

MT29F4G08ABAEAH4:E

Vcc(program)

3.3

Package